Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective Applications
نویسندگان
چکیده
High-current avalanche switching in a bipolar transistor structure in combination with negative differential mobility at extreme (~1 MV/cm) electric fields (e.g. in GaAs) causes generation of ultra-narrow, powerfully avalanching (“collapsing”) multiple field domains moving in a dense electron-hole plasma, which those domains form. Electrical switching with unique speed and high-power-density emission in sub-THz frequency range open impressive prospective applications of the phenomenon.
منابع مشابه
Effect of hot-carrier energy relaxation on main properties of collapsing field domains in avalanching GaAs
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